BDT65 查看數據表（PDF） - Comset Semiconductors
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BDT65 Datasheet PDF : 5 Pages
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SEMICONDUCTORS
BDT65-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
VBE(on)
Base-Emitter Voltage (*) IC= 5 A, VCE= 4 V
VECF
C-E Diode Forward
Voltage
IF= 5 A
IF= 12 A
VCE= 4 V, IC= 1 A
hFE
DC Current Gain (*)
VCE= 4 V, IC= 5 A
VCE= 4 V, IC= 12 A
COB
Output Capacitance
IE= 0, VCB = 10 V
ftest= 1MHz
BDT65
BDT65A
BDT65B
BDT65C
BDT65
BDT65A
BDT65B
BDT65C
BDT65
BDT65A
BDT65B
BDT65C
BDT65
BDT65A
BDT65B
BDT65C
BDT65
BDT65A
BDT65B
BDT65C
BDT65
BDT65A
BDT65B
BDT65C
BDT65
BDT65A
BDT65B
BDT65C
Min Typ Max Unit
-
- 2.5 V
-
2
V
-
2
-
- 1500 -
1000 -
-
-
- 1000 -
- 200 - pF
SWITCHING TIMES
Symbol
Ratings
Test Condition(s)
ton
turn-on time
toff
turn-off time
IC= 5 A , VCC= 30 V
IB1 = -IB2 = 20 mA
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
26/09/2012
COMSET SEMICONDUCTORS
Min Typ Max Unit
-
-
1
6
2.5
10
µs
4|5
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