BD8962MUVE2 查看數據表（PDF） - ROHM Semiconductor

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BD8962MUVE2

2.7V to 5.5V, 3A 1ch Synchronous Buck Converter integrated FET

ROHM Semiconductor 

BD8962MUV

Datasheet

●Absolute Maximum Ratings(Ta=25℃)

Parameter

VCC Voltage

PVCC Voltage

Symbol

VCC

PVCC

Limit

-0.3 to +7 *1

-0.3 to +7 *1

Units

V

V

BST Voltage

VBST

-0.3 to +13

V

BST_SW Voltage

VBST-SW

-0.3 to +7

V

EN Voltage

VEN

-0.3 to +7

V

SW,ITH Voltage

VSW,

VITH

-0.3 to +7

V

Power Dissipation 1

Pd1

0.34 *2

W

Power Dissipation 2

Pd2

0.70 *3

W

Power Dissipation 3

Pd3

1.21 *4

W

Power Dissipation 4

Pd4

3.56 *5

W

Operating temperature range

Topr

-40 to +105

℃

Storage temperature range

Tstg

-55 to +150

℃

Maximum junction temperature Tjmax

+150

℃

＊1 Pd should not be exceeded.

＊2 IC only

＊3 1-layer. mounted on a 74.2mm×74.2mm×1.6mm glass-epoxy board, occupied area by copper foil : 10.29mm2

＊4 4-layer. mounted on a 74.2mm×74.2mm×1.6mm glass-epoxy board, occupied area by copper foil : 10.29mm2 , in each layers

＊5 4-layer. mounted on a 74.2mm×74.2mm×1.6mm glass-epoxy board, occupied area by copper foil : 5505mm2, in each layers

●Operating Ratings(Ta=-40 to +105℃)

Parameter

Power Supply Voltage

Symbol

Min.

VCC

2.7

PVCC

2.7

EN Voltage

VEN

0

Output voltage Setting Range

VOUT

0.8

SW average output current

ISW

-

＊6 In case set output voltage 1.6V or more, VccMin = Vout+1.2V.

＊7 Pd should not be exceeded.

Ratings

Typ.

3.3

3.3

-

-

-

Max.

5.5

5.5

5.5

2.5*6

3.0*7

Units

V

V

V

V

A

●Electrical Characteristics(Ta=25℃ VCC=PVCC=3.3V, EN=VCC, R1=10kΩ, R2=5kΩ ,unless otherwise specified.)

Parameter

Symbol

Min.

Limit

Typ.

Max.

Units

Conditions

Standby current

ISTB

-

0

10

μA

EN=GND

Active current

ICC

-

250

500

μA

EN Low voltage

VENL

-

GND

0.8

V

Standby mode

EN High voltage

VENH

2.0

Vcc

-

V

Active mode

EN input current

IEN

-

1

10

μA

VEN=3.3V

Oscillation frequency

FOSC

0.8

1

1.2

MHz

High side FET ON resistance

RONH

-

82

115

mΩ

PVCC=3.3V

Low side FET ON resistance

RONL

-

70

98

mΩ

PVCC=3.3V

ADJ Voltage

VADJ

0.788

0.800

0.812

V

ITH SInk current

ITHSI

10

18

-

μA

VADJ=1V

ITH Source Current

ITHSO

10

18

-

μA

VADJ=0.6V

UVLO threshold voltage

VUVLO1

2.400

2.500

2.600

V

VCC=3.3V→0V

UVLO release voltage

VUVLO2

2.425

2.550

2.700

V

VCC=0V→3.3V

Soft start time

TSS

2.5

5

10

ms

Timer latch time

TLATCH

0.5

1

2

ms

Output Short circuit

Threshold Voltage

VSCP

-

0.40

0.56

V

VADJ =0.8V→0V

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02.MAR.2012 Rev.001

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