BD8311NUV-E2(2009) 查看數據表（PDF） - ROHM Semiconductor

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BD8311NUV-E2
(Rev.:2009)

High-efficiency Step-up Switching Regulator with Built-in Power MOSFET

ROHM Semiconductor 

BD8311NUV

Technical Note

●Electrical characteristics

Parameter

Symbol

[Low voltage input malfunction preventing circuit]

Detection threshold voltage

VUV

Hysteresis range

ΔVUVhy

[Oscillator]

Oscillation frequency

fosc

[Regulator]

Output voltage

VREG

[ERROR AMP]

INV threshold voltage

VINV

Input bias current

IINV

Soft-start time

Tss

[PWM comparator]

LX Max Duty

Dmax1

[SWOUT]

ON resistance

RONSWOUT

[Output]

LX NMOS ON resistance

RON

LX leak current

Ileak

[STB]

STB pin

control voltage

Operation

No-operation

VSTBH

VSTBL

STB pin pull-down resistance

RSTB

[Circuit current]

Standby current VCC

ISTB

Circuit current at operation VCC

Icc

 Not designed to be resistant to radiation

Target Value

Min

Typ

Max

-

2.9

3.2

100

200

300

1.1

1.2

1.3

4.65

5.0

5.35

0.99

1.00

1.01

-50

0

50

5.3

8.8

12.2

77

85

93

-

50

100

-

80

150

-1

0

1

2.5

-

11

-0.3

-

0.3

250

400

700

-

-

1

-

600

900

Unit

Conditions

V

VREG monitor

mV

MHz

V

V

nA

msec

Vcc=11.0V , VINV=5.5V

%

Ω

mΩ

uA

V

V

kΩ

uA

uA

VINV=1.2V

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© 2009 ROHM Co., Ltd. All rights reserved.

3/15

2009.04 - Rev.B

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