BD313 查看數據表（PDF） - Inchange Semiconductor

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BD313

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

BD313

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC=200mA ; IB=0

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A

VBE(sat) Base-Emitter Saturation Voltage

IC= 5A; IB=B 0.5A

VBE(on) Base-Emitter On Voltage

IC= 4A; VCE= 4V

ICBO

Collector Cutoff Current

VCB= 80V; IB=B 0

IEBO

Emitter Cutoff Current

VEB= 7.0V; IC=0

hFE-1

DC Current Gain

IC= 4A; VCE= 4V

hFE-2

DC Current Gain

IC= 10A; VCE= 4V

fT

Current Gain-Bandwidth Product

IC= 0.5A ; VCE= 10V;f=1.0MHz

MIN MAX UNIT

80

V

1.0

V

1.8

V

1.5

V

1.0 mA

1.0 mA

25

5

4

MHz

isc Website：www.iscsemi.cn

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