BCM847 查看數據表（PDF） - Philips Electronics

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BCM847

NPN/NPN matched double transistors

Philips Electronics 

Philips Semiconductors

BCM847BV/BS/DS

NPN/NPN matched double transistors

5. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Per transistor

VCBO

VCEO

VEBO

IC

ICM

Ptot

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current

peak collector current

total power dissipation

SOT666

open emitter

open base

open collector

single pulse;

tp ≤ 1 ms

Tamb ≤ 25 °C

-

-

-

-

-

[1][2] -

SOT363

[1] -

SOT457

[1] -

Per device

Ptot

total power dissipation

Tamb ≤ 25 °C

SOT666

[1][2] -

SOT363

[1] -

SOT457

[1] -

Tj

junction temperature

-

Tamb

ambient temperature

−65

Tstg

storage temperature

−65

Max Unit

50

V

45

V

6

V

100 mA

200 mA

200 mW

200 mW

250 mW

300 mW

300 mW

380 mW

150 °C

+150 °C

+150 °C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Reflow soldering is the only recommended soldering method.

6. Thermal characteristics

Table 7. Thermal characteristics

Symbol Parameter

Conditions

Min

Typ

Max Unit

Per transistor

Rth(j-a)

thermal resistance from in free air

junction to ambient

SOT666

[1][2] -

-

625

K/W

SOT363

[1] -

-

625

K/W

SOT457

[1] -

-

500

K/W

BCM847BV_BS_DS_5

Product data sheet

Rev. 05 — 27 June 2006

© Koninklijke Philips Electronics N.V. 2006. All rights reserved.

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