BC847CS 查看數據表（PDF） - PANJIT INTERNATIONAL
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BC847CS Datasheet PDF : 4 Pages
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BC847CS/BC857CS
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance, Junction to Ambient
S YMB OL
RΘJA
Note 1 : Transistor mounted on FR-4 board 70 x 60 x 1mm
ELECTRICAL CHARACTERISTICS (TJ=25oC,unless otherwise noted)
CALUE
556
UNITS
OC /W
PARAMETER
Collector-Emitter Breakdown Voltage
(I C=10mA,I B=0)
Collector-Base Breakdown Voltage
(I C=10µA,I B=0)
Emitter-Base Breakdown Voltage
(I E=1µA,I C=0)
Emitter-Base Cutoff Current (VEB=5V)
Collector-Base Cutoff Current (VCE=30V,I E=0)
TJ=150oC
DC Current Gain
(I C=10µA,VCE=5V)
(I C=2.0mA,VCE=5V)
Collector-Emitter Saturation Voltage (I C=10mA,I B=0.5mA)
(I C=100mA,I B=5.0mA)
Base-Emitter Saturation Voltage (I C=10mA,I B=0.5mA)
(I C=100mA,I B=5.0mA)
Base-Emitter On Voltage (I C=2.0mA,VCE=5.0V)
(I C=10mA,VCE=5.0V)
Collector-Base Capacitance
(VCB=10V,I E=0,f=1MHz)
Current-Gain-Bandwidth Product
(I C=10mA,VCE=5.0V,f=100MHz)
S YMB OL
V (BR)C E O
MIN.
45
V (BR)C B O
50
V (BR)E B O
5.0
I EBO
-
I CBO
-
-
TYP.
-
MA X . UNIT
-
V
-
-
V
-
-
V
-
100
nA
-
15
nA
-
4.0
µA
hFE
-
270
-
-
420
520
800
V CE(SAT)
-
-
V BE(SAT)
-
-
V BE(ON)
0.6
-
-
-
0.3
0.65
V
0.7
0.9
-
-
V
-
-
0.75
0.82
V
CCB
-
-
4.5
pF
FT
-
200
-
MHz
REV.0.0-JUN.27.2008
PAGE . 2
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