BC857F 查看數據表（PDF） - Philips Electronics

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BC857F

PNP general purpose transistors

Philips Electronics 

Philips Semiconductors

PNP general purpose transistors

Preliminary specification

BC856F; BC857F; BC858F series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

VCBO

VCEO

VEBO

IC

ICM

IBM

Ptot

Tstg

Tj

Tamb

PARAMETER

collector-base voltage

BC856AF; BC856BF

BC857AF; BC857BF; BC857CF

BC858AF; BC858BF; BC858CF

collector-emitter voltage

BC856AF; BC856BF

BC857AF; BC857BF; BC857CF

BC858AF; BC858BF; BC858CF

emitter-base voltage

collector current (DC)

peak collector current

peak base current

total power dissipation

storage temperature

junction temperature

operating ambient temperature

CONDITIONS

open emitter

open base

open collector

Tamb ≤ 25 °C; note 1

Note

1. Transistor mounted on an FR4 printed-circuit board.

MIN. MAX. UNIT

−

−80

V

−

−50

V

−

−30

V

−

−65

−

−45

−

−30

−

−5

V

−

−100 mA

−

−200 mA

−

−100 mA

−

250

mW

−65

+150 °C

−

150

°C

−65

+150 °C

1999 May 21

3

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