BB505M 查看數據表（PDF） - Renesas Electronics
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BB505M Datasheet PDF : 9 Pages
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BB505M
Power Gain vs. Gate Resistance
50
VDS = 5 V
VG1 = 5 V
40 VG2S = 4 V
f = 900 MHz
30
20
10
0
100
200
500
1000
Gate Resistance RG (kΩ)
Power Gain vs.
Gate2 to Source Voltage
25
VDS = 5 V
VG1 = 5 V
20 RG = 220 kΩ
f = 900 MHz
15
10
5
0
1
2
3
4
Gate2 to Source Voltage VG2S (V)
Gain Reduction vs.
Gate2 to Source Voltage
40
VDS = 5 V
VG1 = 5 V
30
RG = 220 kΩ
f = 900MHz
20
10
Noise Figure vs. Gate Resistance
4
VDS = 5 V
VG1 = 5 V
3
VG2S = 4 V
f = 900 MHz
2
1
0
100
5
200
500
1000
Gate Resistance RG (kΩ)
Noise Figure vs.
Gate2 to Source Voltage
4
3
2
VDS = 5 V
VG1 = 5 V
1 RG = 220 kΩ
f = 900 MHz
0
1
2
3
4
Gate2 to Source Voltage VG2S (V)
0
1
2
3
4
Gate2 to Source Voltage VG2S (V)
Rev.1.00, Jun.14.2004, page 5 of 8
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