SBAS16LT3G(2020) 查看數據表（PDF） - ON Semiconductor

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SBAS16LT3G
(Rev.:2020)

Switching Diode

ON Semiconductor 

BAS16L

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Voltage Leakage Current

(VR = 100 V)

(VR = 75 Vdc, TJ = 150°C)

(VR = 25 Vdc, TJ = 150°C)

IR

mAdc

−

1.0

−

50

−

30

Reverse Breakdown Voltage

(IBR = 100 mAdc)

V(BR)

100

−

Vdc

Forward Voltage

(IF = 1.0 mAdc)

(IF = 10 mAdc)

(IF = 50 mAdc)

(IF = 150 mAdc)

VF

mV

−

715

−

855

−

1000

−

1250

Diode Capacitance

(VR = 0, f = 1.0 MHz)

CD

−

2.0

pF

Forward Recovery Voltage

(IF = 10 mAdc, tr = 20 ns)

VFR

−

1.75

Vdc

Reverse Recovery Time

(IF = IR = 10 mAdc, RL = 50 W)

trr

−

6.0

ns

Stored Charge

(IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 W)

QS

−

45

pC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

820 W

+10 V

2.0 k

100 mH IF

0.1 mF

50 W OUTPUT

PULSE

GENERATOR

D.U.T.

0.1 mF

tr

tp

t

10%

50 W INPUT

SAMPLING

VR

OSCILLOSCOPE

90%

INPUT SIGNAL

IF

trr

t

iR(REC) = 1.0 mA

IR

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at iR(REC) = 1.0 mA)

Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp » trr

Figure 1. Recovery Time Equivalent Test Circuit

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