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BA5983FM 查看數據表(PDF) - ROHM Semiconductor

零件编号
产品描述 (功能)
生产厂家
BA5983FM
ROHM
ROHM Semiconductor 
BA5983FM Datasheet PDF : 6 Pages
1 2 3 4 5 6
5/5
(17) This IC is a monolithic IC which has a P+ isolations and P substrate to isolate elements each other.
This P layer and an N layer in each element form a PN junction to construct various parasitic elements.
Due to the IC structure, the parasitic elements are inevitably created by the potential relationship.
Activation of the parasitic elements can cause interference between circuits and may result in a
malfunction or, consequently, a fatal damage. Therefore, make sure that the IC must not be used
under conditions that may activate the parasitic elements, for example, applying the lower voltage than
the ground level (GND, P substrate) to the input terminals.
In addition, do not apply the voltage to input terminals without applying the power supply voltage to the
IC. Also while applying the power supply voltage, the voltage of each input terminal must not be over
the power supply voltage, or within the guaranteed values in the electric characteristics.
REV. A

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