AT49F516-55VI 查看數據表（PDF） - Atmel Corporation
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AT49F516-55VI Datasheet PDF : 13 Pages
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Program Cycle Characteristics
Symbol
tBP
tAS
tAH
tDS
tDH
tWP
tWPH
tEC
Parameter
Word Programming Time
Address Set-up Time
Address Hold Time
Data Set-up Time
Data Hold Time
Write Pulse Width
Write Pulse Width High
Erase Cycle Time
Program Cycle Waveforms
Min
Typ
Max
Units
10
50
µs
0
ns
50
ns
50
ns
0
ns
90
ns
90
ns
10
seconds
A0-A14
Main Memory or Chip Erase Cycle Waveforms
OE
CE
WE
A0-A14
DATA
tWP
tWPH
tAS
tAH
tDH
5555
2AAA
tDS
5555
5555
2AAA
5555
tEC
AA
WORD 0
55
WORD 1
80
WORD 2
AA
WORD 3
55
WORD 4
NOTE 2
WORD 5
Notes: 1. OE must be high only when WE and CE are both low.
2. For chip erase, the address should be 10H. For a main memory erase the data should be 30H.
8
AT49F516
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