AT49F516-55VI 查看數據表（PDF） - Atmel Corporation

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AT49F516-55VI

512K (32K x 16) 5-volt Only Flash Memory

Atmel Corporation 

Features

• Single Voltage Operation

– 5V Read

– 5V Reprogramming

• Fast Read Access Time - 55 ns

• Internal Program Control and Timer

• 8K Word Boot Block With Lockout

• Fast Erase Cycle Time - 10 seconds

• Word-By-Word Programming - 10 µs/Word Typical

• Hardware Data Protection

• DATA Polling For End Of Program Detection

• Small 10 x 14 VSOP Package

• Typical 10,000 Write Cycles

Description

The AT49F516 is a 5-volt only in-system programmable and erasable Flash Memory.

It’s 512K of memory is organized as 32,768 words by 16 bits. Manufactured with

Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 55

ns with power dissipation of just 275 mW over the commercial temperature range.

When the device is deselected, the CMOS standby current is less than 100 µA.

(continued)

512K (32K x 16)

5-volt Only

Flash Memory

AT49F516

Preliminary

Pin Configurations

Pin Name

A0 - A14

CE

OE

WE

I/O0 - I/O15

NC

Function

Addresses

Chip Enable

Output Enable

Write Enable

Data Inputs/Outputs

No Connect

PLCC Top View

I/O12 7

I/O11 8

I/O10 9

I/O9 10

I/O8 11

GND 12

NC 13

I/O7 14

I/O6 15

I/O5 16

I/O4 17

39 A13

38 A12

37 A11

36 A10

35 A9

34 GND

33 NC

32 A8

31 A7

30 A6

29 A5

A0 1

A1 2

A2 3

A3 4

A4 5

A5 6

A6 7

A7 8

A8 9

GND 10

A9 11

A10 12

A11 13

A12 14

A13 15

A14 16

NC 17

NC 18

WE 19

VCC 20

VSOP Top View

Type 1

10 x 14 mm

10 x 14 mm

40 OE

39 I/O0

38 I/O1

37 I/O2

36 I/O3

35 I/O4

34 I/O5

33 I/O6

32 I/07

31 GND

30 I/O8

29 I/O9

28 I/O10

27 I/O11

26 I/O12

25 I/O13

24 I/O14

23 I/O15

22 NC

21 CE

Rev. 1089B–10/98

1

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