AT45DB081A
DC Characteristics
Symbol Parameter
Condition
Min
Typ
ISB
Standby Current
CS, RESET, WP = VCC, all inputs
at CMOS levels
2
ICC1
Active Current, Read
Operation
f = 13 MHz; IOUT = 0 mA;
VCC = 3.6V
4
ICC2
Active Current,
Program/Erase Operation
VCC = 3.6V
15
ILI
Input Load Current
VIN = CMOS levels
ILO
Output Leakage Current
VI/O = CMOS levels
VIL
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
IOL = 1.6 mA; VCC = 2.7V
VOH
Output High Voltage
IOH = -100 µA
2.0
VCC - 0.2V
Max
Units
10
µA
10
mA
35
mA
1
µA
1
µA
0.6
V
V
0.4
V
V
AC Characteristics
Symbol
fSCK
fCAR
fBAR
tWH
tWL
tCS
tCSS
tCSH
tCSB
tSU
tH
tHO
tDIS
tV
tBRBD
tXFR
tEP
tP
tPE
tBE
tRST
tREC
Parameter
SCK Frequency
SCK Frequency for Continuous Array Read
SCK Frequency for Burst Array Read
SCK High Time
SCK Low Time
Minimum CS High Time
CS Setup Time
CS Hold Time
CS High to RDY/BUSY Low
Data In Setup Time
Data In Hold Time
Output Hold Time
Output Disable Time
Output Valid
Burst Read Boundary Delay
Page to Buffer Transfer/Compare Time
Page Erase and Programming Time
Page Programming Time
Page Erase Time
Block Erase Time
RESET Pulse Width
RESET Recovery Time
Min
Max
Units
13
MHz
10
MHz
13
MHz
35
ns
35
ns
250
ns
250
ns
250
ns
200
ns
10
ns
20
ns
0
ns
25
ns
30
ns
1
µs
250
µs
20
ms
14
ms
8
ms
12
ms
10
µs
1
µs
11