EGF1D(1998) 查看數據表（PDF） - Fairchild Semiconductor
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EGF1D Datasheet PDF : 4 Pages
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Typical Characteristics
Forward Current Derating Curve
1.6
1.4
1.2
1
0.8 RESISTIVE OR
INDUCTIVE LOAD
0.6 P.C.B. MOUNTED
ON 0.2 x 0.2"
0.4 (5.0 x 5.0 mm)
COPPER PAD AREAS
0.2
0
0 25 50 75 100 125 150 175
LEAD TEMPERATURE (ºC)
Non-Repetitive Surge Current
40
30
Forward Characteristics
100
TJA = 25º C
Pulse Width = 300µS
2% Duty Cycle
10
1
0.1
0.01
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
FORWARD VOLTAGE (V)
Reverse Characteristics
1000
TA = 100º C
100
20
10
TJA = 25º C
10
1
0
1
2
5
10 20
50 100
NUMBER OF CYCLES AT 60Hz
0.1
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Typical Junction Capacitance
60
50
40
30
20
10
0
0.1
0.5 1 2 5 10 20 50 100
500
REVERSE VOLTAGE (V)
50Ω
NONINDUCTIVE
50Ω
NONINDUCTIVE
trr
+0.5A
DUT
50V
(approx)
50Ω
NONINDUCTIVE
(-)
Pulse
Generator
(Note 2)
(+)
OSCILLOSCOPE
(Note 1)
0
-0.25A
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
-1.0A
1.0cm
SET TIME BASE FOR
5/ 10 ns/ cm
Reverse Recovery Time Characterstic and Test Circuit Diagram
EGF1A-EGF1D, Rev. B
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