AOD422 查看數據表（PDF） - Unspecified

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AOD422

N-Channel Enhancement Mode Field Effect Transistor

Unspecified 

AOD422, AOD422L

N-Channel Enhancement Mode Field

Effect Transistor

General Description

The AOD422 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and

operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM

applications. It is ESD protected. AOD422L (Green Product) is offered in a Lead Free package.

Features

VDS (V) = 20V

ID = 10 A

RDS(ON) < 22mΩ (VGS = 4.5V)

RDS(ON) < 26mΩ (VGS = 2.5V)

RDS(ON) < 34mΩ (VGS = 1.8V)

ESD Rating: 2000V HBM

TO-252

D-PAK

D

Top View

Drain Connected to

Tab

G

S

GD S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain TC=25°C

Current G

TC=100°C

ID

Pulsed Drain Current C

IDM

Avalanche Current C

IAR

Repetitive avalanche energy L=0.1mH C

EAR

TC=25°C

Power Dissipation B TC=100°C

PD

TA=25°C

Power Dissipation A TA=70°C

PDSM

Junction and Storage Temperature Range TJ, TSTG

Maximum

20

±8

10

10

30

15

26

50

20

2.5

1.6

-55 to 150

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient A

Maximum Junction-to-Ambient A

Maximum Junction-to-Case C

t ≤ 10s

Steady-State

Steady-State

Symbol

RθJA

RθJL

Typ

16.7

40

1.9

Max

25

50

2.5

Units

V

V

A

A

mJ

W

W

°C

Units

°C/W

°C/W

°C/W

1/4

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