AOD480 查看數據表（PDF） - Alpha and Omega Semiconductor

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AOD480

N-Channel Enhancement Mode Field Effect Transistor

Alpha and Omega Semiconductor 

AOD488

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30

10V

5V

25

20

6V

15

4.5V

4V

10

5

0

0

3.5V

VGS=3V

1

2

3

4

5

VDS (Volts)

Fig 1: On-Region Characteristics

20

16

VDS=5V

12

8

125°C

4

25°C

0

1.5

2

2.5

3

3.5

4

4.5

VGS(Volts)

Figure 2: Transfer Characteristics

35

1.6

VGS=10V

VGS=4.5V

ID=20A

30

1.4

25

20

VGS=10V

15

0

5

10

15

20

ID (A)

Figure 3: On-Resistance vs. Drain Current and Gate

Voltage

1.2

VGS=4.5V

ID=8A

1

0.8

0.6

-50 -25 0 25 50 75 100 125 150 175

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

60

1.0E+01

ID=20A

50

1.0E+00

1.0E-01

40

125°C

125°C

1.0E-02

THIS PR3O0DUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR US2E5S°CAS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUT1H.0OER-0IZ3ED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF2S0UCH APPLICATIONS OR USES OF ITS PRODUCTS.

FUNCTIONS AND RELIABILITY25W°CITHOUT NOTICE.

AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

1.0E-04

10

2

4

6

8

10

VGS (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

1.0E-05

0.0

0.2

0.4

0.6

0.8

1.0

VSD (Volts)

Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

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