AOD4146 查看數據表（PDF） - Alpha and Omega Semiconductor
零件编号
产品描述 (功能)
生产厂家
AOD4146 Datasheet PDF : 7 Pages
| |||
AOD4146/AOI4146
30V N-Channel MOSFET
SDMOS TM
General Description
Product Summary
The AOD4146/AOI4146 is fabricated with SDMOSTM
trench technology that combines excellent RDS(ON) with low
gate charge.The result is outstanding efficiency with
controlled switching behavior. This universal technology is
well suited for PWM, load switching and general purpose
applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
30V
55A
< 5.6mΩ
< 9.5mΩ
TopView
TO252
DPAK
Bottom View
Top View
TO-251A
IPAK
Bottom View
D
S
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current G
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.05mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
55
43
190
15
12
50
63
62
31
2.5
1.6
-55 to 175
G
G
D
S
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A D Steady-State
RθJA
15
41
Maximum Junction-to-Case
Steady-State
RθJC
2
Max
20
50
2.4
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 1: June 2009
www.aosmd.com
Page 1 of 7
Share Link: 