AO4622 查看數據表（PDF） - Alpha and Omega Semiconductor
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AO4622 Datasheet PDF : 9 Pages
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AO4622
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-16V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±12V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-5A
VGS=-2.5V, ID=-4.2A
Forward Transconductance
VDS=-5V, ID=-5A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
-20
TJ=55°C
-1.3
-25
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VGS=-4.5V, VDS=-10V, ID=-4.5A
VGS=-4.5V, VDS=-10V, RL=2Ω,
RGEN=3Ω
IF=-5A, dI/dt=100A/µs
IF=-5A, dI/dt=100A/µs
Typ Max Units
V
-1
µA
-5
±100 nA
-0.9 -0.5 V
A
44
53
mΩ
59
71
67
87 mΩ
13
S
-0.76 -1
V
-2.5 A
800 960 pF
131
pF
103
pF
6.7 10
Ω
15.5
nC
7.4
nC
1.3
nC
2.9
nC
4.4
ns
7.6
ns
44
ns
13.5
ns
20
ns
9
nC
A: The value of R θθJJAA is measured with the device mounted on 1in 22 FR-4 board with 2oz. Copper, in a still air environment with T AA =25°C. The value
vinaaluneyingaivneynaapgpivleicnataiopnpldiceaptieonnddseopnenthdes uosnetrh'sesupseecri'fsicsbpoeacrifdicdbeosaigrnd.design. The current rating is based on the t ≤ 10s thermal resistance
rBa:tiRnge.petitive rating, pulse width limited by junction temperature.
BC:. RTheepeRtitθiJvAeisratthinegs,upmulsoef twhiedthelirmmitaeldimbpyejudnecntcioenfrtoemmpjuenractiuorne.to lead R θJL and lead to ambient. RθJL and RθJC are equivalent terms referring to
Cth.eTrmhealRreθsJAisitsanthcee sfruommojuf nthcetiothnetromdarlaiimn pleeadde.nce from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,1a2re,1o4batareineodbtuasininegd <u3s0in0gµ8s0pµuslspeusl,sdeus,tydcuytyclcey0c.le5%0.5m%axm. ax.
E. These tests are performed with the device mounted on 1 in 22 FR-4 board with 2oz. Copper, in a still air environment with T AA=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
Rev5: Nov 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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