L800BT90V 查看數據表（PDF） - Advanced Micro Devices

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L800BT90V

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

Advanced Micro Devices 

AC CHARACTERISTICS

555 for program

2AA for erase

PA for program

SA for sector erase

555 for chip erase

Data# Polling

Addresses

WE#

OE#

CE#

Data

RESET#

tWC

tAS

tAH

tWH

tGHEL

tCP

tWS

tCPH

tDS

tDH

tWHWH1 or 2

tBUSY

tRH

A0 for program PD for program

55 for erase

30 for sector erase

10 for chip erase

PA

DQ7# DOUT

RY/BY#

Notes:

1. PA = program address, PD = program data, DQ7# = complement of the data written to the device, DOUT = data written to the

device.

2. Figure indicates the last two bus cycles of command sequence.

3. Word mode address used as an example.

Figure 24. Alternate CE# Controlled Write Operation Timings

21490G-27

Am29LV800B

37

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