ACST107S 查看數據表（PDF） - STMicroelectronics
零件编号
产品描述 (功能)
生产厂家
ACST107S Datasheet PDF : 12 Pages
| |||
ACST10
Characteristics
Figure 8.
Non repetitive surge peak on-state
current for a sinusoidal pulse and
corresponding value of I²t
ITSM(A), I2t (A2s)
10000
dI/dt limitation: 100 A/µs
Tj initial=25 °C
1000
ITSM
Figure 9.
Relative variation of gate triggering
current (IGT) and gate triggering
voltage vs. junction temperature
I,
GT
VGT,[Tj/IGT[Tj
=
25
°C]
3.0
IGTQ3
2.5
IGTQ1-Q2
2.0
100
10
1
0.01
tp(ms)
0.10
I²t
1.00
1.5
1.0
VGTQ1-Q2-Q3
0.5
T (°C)
j
0.0
10.00
-50
-25
0
25
50
75
100
125
Figure 10. Relative variation of holding (IH)
and latching current (IL) vs.
junction temperature
Figure 11. Relative variation of critical rate of
decrease of main current (di/dt)c
vs. (dV/dt)c
2.5 IH,IL[TJ]/IH,IL[Tj = 25 °C]
(di/dt)c [(dV/dt)c] / Specified (di/dt)c
1.6
1.4
2.0
1.2
1.5
1.0
Typical values
0.8
1.0
0.6
ACST10-7Cxx
ACST10-7Sxx
IL
0.4
0.5
IH
0.2
TJ(°C)
0.0
0.0
-50
-25
0
25
50
75
100
125
0.1
1
(dV/dt)c (V/µs)
10
100
Figure 12. Relative variation of critical rate of
decrease of main current (di/dt)c
vs. junction temperature
(dI/dt)c[Tj] / (dI/dt)c[Tj=125°C]
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
Tj(°C)
0
25
50
75
100
125
Figure 13. Relative variation of static dV/dt vs.
junction temperature
(dV/dt)[T ] / (dV/dt)[T = 125 °C]
j
j
11
10
9
8
7
6
5
4
3
2
1
T (°C)
j
0
25
50
75
VD = VR = 460 V
100
125
5/12
Share Link: 