74LVC1G79GM 查看數據表（PDF） - Philips Electronics

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74LVC1G79GM

Single D-type flip-flop; positive-edge trigger

Philips Electronics 

Philips Semiconductors

Single D-type flip-flop; positive-edge trigger

Product specification

74LVC1G79

FEATURES

• Wide supply voltage range from 1.65 V to 5.5 V

• High noise immunity

• Complies with JEDEC standard:

– JESD8-7 (1.65 V to 1.95 V)

– JESD8-5 (2.3 V to 2.7 V)

– JESD8B/JESD36 (2.7 V to 3.6 V).

• ±24 mA output drive (VCC = 3.0 V)

• ESD protection:

– HBM EIA/JESD22-A114-B exceeds 2000 V

– MM EIA/JESD22-A115-A exceeds 200 V.

• CMOS low power consumption

• Latch-up performance exceeds 250 mA

• Direct interface with TTL levels

• Inputs accept voltages up to 5 V

• Multiple package options

• Specified from −40 °C to +85 °C and

−40 °C to +125 °C.

DESCRIPTION

The 74LVC1G79 is a high-performance, low-power,

low-voltage, Si-gate CMOS device, superior to most

advanced CMOS compatible TTL families.

Inputs can be driven from either 3.3 V or 5 V devices.

This feature allows the use of this device in a mixed

3.3 V and 5 V environment.

This device is fully specified for partial Power-down

applications using Ioff. The Ioff circuitry disables the output,

preventing the damaging backflow current through the

device when it is powered down.

The 74LVC1G79 provides a single positive-edge triggered

D-type flip-flop.

Information on the data input is transferred to the Q output

on the LOW-to-HIGH transition of the clock pulse.

The D input must be stable one set-up time prior to the

LOW-to-HIGH clock transition for predictable operation.

QUICK REFERENCE DATA

GND = 0 V; Tamb = 25 °C; tr = tf ≤ 2.5 ns.

SYMBOL

PARAMETER

tPHL/tPLH

propagation delay CP to Q

fmax

maximum frequency

CI

input capacitance

CPD

power dissipation capacitance

per buffer

CONDITIONS

VCC = 1.8 V; CL = 30 pF; RL = 1 kΩ

VCC = 2.5 V; CL = 30 pF; RL = 500 Ω

VCC = 2.7 V; CL = 50 pF; RL = 500 Ω

VCC = 3.3 V; CL = 50 pF; RL = 500 Ω

VCC = 5.0 V; CL = 50 pF; RL = 500 Ω

VCC = 3.3 V; CL = 50 pF; RL = 500 Ω

VCC = 3.3 V; notes 1 and 2

Notes

1. CPD is used to determine the dynamic power dissipation (PD in µW).

PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in Volts;

N = total load switching outputs;

Σ(CL × VCC2 × fo) = sum of the outputs.

2. The condition is VI = GND to VCC.

TYPICAL UNIT

3.6

ns

2.3

ns

2.6

ns

2.2

ns

1.7

ns

450

MHz

5

pF

17

pF

2004 Sep 10

2

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