74LVC1G57GW 查看數據表（PDF） - Philips Electronics
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74LVC1G57GW Datasheet PDF : 18 Pages
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Philips Semiconductors
74LVC1G57
Low-power configurable multiple function gate
12. Dynamic characteristics
Table 10: Dynamic characteristics
GND = 0 V.
Symbol Parameter
Tamb = −40 °C to +85 °C [1]
tPHL, tPLH propagation delay A, B, C to Y
CPD
power dissipation capacitance per
buffer
Tamb = −40 °C to +125 °C
tPHL, tPLH propagation delay A, B, C to Y
Conditions
see Figure 11 and 12
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 2.7 V
VCC = 3.0 V to 3.6 V
VCC = 4.5 V to 5.5 V
VCC = 3.3 V
see Figure 11 and 12
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 2.7 V
VCC = 3.0 V to 3.6 V
VCC = 4.5 V to 5.5 V
[1] Typical values are measured at nominal VCC and Tamb = 25 °C.
[2] CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = total load switching outputs;
Σ(CL × VCC2 × fo) = sum of the outputs.
[3] The condition is VI = GND to VCC.
Min Typ Max Unit
1.0 6.0 14.4 ns
0.5 3.5 8.3 ns
0.5 4.2 8.5 ns
0.5 3.8 6.3 ns
0.5 3.0 5.1 ns
[2] [3] -
22
-
pF
1.0 -
0.5 -
0.5 -
0.5 -
0.5 -
18
ns
10.4 ns
10.6 ns
7.9 ns
6.4 ns
9397 750 13722
Product data sheet
Rev. 01 — 6 September 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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