Philips Semiconductors
16-bit buffer/line driver; 5 V input/output
tolerant; 3-state
Product specification
74LVC16244A;
74LVCH16244A
FEATURES
• 5 V tolerant inputs/outputs for interfacing with 5 V logic
• Wide supply voltage range from 1.2 to 3.6 V
• CMOS low power consumption
• MULTIBYTETM flow-through standard pin-out
architecture
• Low inductance multiple power and ground pins for
minimum noise and ground bounce
• Direct interface with TTL levels
• All data inputs have bushold (74LVCH16244A only).
• Complies with JEDEC standard no. 8-1A
• ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V.
• Specified from −40 to +85 °C and −40 to +125 °C.
DESCRIPTION
The 74LVC(H)16244A is a high-performance, low power,
low voltage, Si-gate CMOS device, superior to most
advanced CMOS compatible TTL families. Inputs can be
driven from either 3.3 or 5 V devices. In 3-state operation,
outputs can handle 5 Volt. These features allow the use of
these devices as a mixed 3.3 and 5 V environment.
The 74LVC(H)16244A is a 16-bit non-inverting buffer/line
driver with 3-state outputs. The device can be used as four
4-bit buffers, two 8-bit buffers or one 16-bit buffer. The
device features four Output Enables (1OE, 2OE, 3OE and
4OE), each controlling four of the 3-state outputs. A HIGH
on nOE causes the outputs to assume a high-impedance
OFF-state.
The 74LVC(H)16244A is identical to the 74LVC16240A
but has non-inverting outputs.
The 74LVCH16244A bushold data inputs eliminates the
need for external pull-up resistors to hold unused inputs.
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C; tr = tf ≤ 2.5 ns.
SYMBOL
PARAMETER
tPHL/tPLH
tPZH/tPZL
tPHZ/tPLZ
CI
CPD
propagation delay nAn to nYn
3-state output enable time nOE to nYn
3-state output disable time nOE to nYn
input capacitance
power dissipation capacitance per gate
CONDITIONS
CL = 50 pF; VCC = 3.3 V
CL = 50 pF; VCC = 3.3 V
CL = 50 pF; VCC = 3.3 V
VCC = 3.3 V; notes 1 and 2
outputs enabled
outputs disabled
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total load switching outputs;
Σ(CL × VCC2 × fo) = sum of the outputs.
2. The condition is VI = GND to VCC.
TYPICAL
3.0
3.5
3.7
5.0
UNIT
ns
ns
ns
pF
12
pF
4.0
pF
2003 Dec 08
2