N74F189AD 查看數據表（PDF） - Philips Electronics
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N74F189AD Datasheet PDF : 10 Pages
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Philips Semiconductors
64-bit TTL bipolar RAM, inverting (3-State)
Product specification
74F189A
FEATURES
• High speed performance
• Replaces 74F189
• Address access time: 8ns max vs 28ns for 74F189
• Power dissipation: 4.3mW/bit
• Schottky clamp TTL
• One chip enable
• Inverting outputs (for non-inverting outputs see 74F219A)
• 3-State outputs
• 74F189A in 150 mil wide SO is preferred options for new designs
are fully decoded on chip. The outputs are in high impedance state
whenever the chip enable (CE) is high. The outputs are active only
in the READ mode (WE = high) and the output data is the
complement of the stored data.
TYPE
74F189A
TYPICAL
ACCESS
TIME
5.0ns
TYPICAL
SUPPLY
CURRENT
( TOTAL)
55mA
DESCRIPTION
The 74F189A is a high speed, 64-bit RAM organized as a 16-word
by 4-bit array. Address inputs are buffered to minimize loading and
ORDERING INFORMATION
DESCRIPTION
16-pin plastic Dual In-line Package
16-pin plastic Small Outline (150mil)
ORDER CODE
COMMERCIAL RANGE
VCC = 5V ±10%, Tamb = 0°C to +70°C
N74F189AN
N74F189AD
DRAWING NUMBER
SOT38-4
SOT109-1
INPUT AND OUTPUT LOADING AND FAN OUT TABLE
PINS
DESCRIPTION
74F (U.L.)
HIGH/LOW
D0 – D3
Data inputs
1.0/1.0
A0 – A3
Address inputs
1.0/1.0
CE
Chip enable input (active low)
1.0/2.0
WE
Write enable input (active low)
1.0/2.0
Q0 – Q3
Data outputs
150/40
NOTE: One (1.0) FAST unit load is defined as: 20µA in the high state and 0.6mA in the low state.
LOAD VALUE
HIGH/LOW
20µA/0.6mA
20µA/0.6mA
20µA/1.2mA
20µA/1.2mA
3mA/24mA
PIN CONFIGURATION
A0 1
CE 2
WE 3
D0 4
Q0 5
D1 6
Q1 7
GND 8
16 VCC
15 A1
14 A2
13 A3
12 D3
11 Q3
10 D2
9 Q2
SF00299
LOGIC SYMBOL
4 6 10 12
D0 D1 D2 D3
1
A0
15
A1
14
A2
13
A3
2
CE
3
WE
Q0 Q1 Q2 Q3
VCC = pin 16
GND = pin 8
5 7 9 11
SF00300
1990 Feb 23
2
853–1309 98908
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