74AHC1G04GW 查看數據表（PDF） - Philips Electronics

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74AHC1G04GW

Inverter

Philips Electronics 

Philips Semiconductors

Inverter

Product specification

74AHC1G04; 74AHCT1G04

FEATURES

• Symmetrical output impedance

• High noise immunity

• ESD protection:

– HBM EIA/JESD22-A114-A exceeds 2000 V

– MM EIA/JESD22-A115-A exceeds 200 V

– CDM EIA/JESD22-C101 exceeds 1000 V.

• Low power dissipation

• Balanced propagation delays

• Very small 5-pin package

• Output capability: standard

• Specified from −40 to +125 °C.

DESCRIPTION

The 74AHC1G/AHCT1G04 is a high-speed Si-gate CMOS

device.

The 74AHC1G/AHCT1G04 provides the inverting buffer.

QUICK REFERENCE DATA

GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns.

SYMBOL

PARAMETER

CONDITIONS

tPHL/tPLH

CI

CPD

propagation delay A to Y

input capacitance

power dissipation capacitance

CL = 15 pF; VCC = 5 V

CL = 50 pF; f = 1 MHz;

notes 1 and 2

Notes

1. CPD is used to determine the dynamic power dissipation (PD in µW).

PD = CPD × VCC2 × fi + (CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in Volts.

2. The condition is VI = GND to VCC.

TYPICAL

AHC1G AHCT1G

UNIT

3.1

3.4

ns

1.5

1.5

pF

15

16

pF

FUNCTION TABLE

See note 1.

INPUT

A

L

H

Note

1. H = HIGH voltage level;

L = LOW voltage level.

OUTPUT

Y

H

L

2002 May 27

2

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