74AHC1G79 查看數據表（PDF） - NXP Semiconductors.
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74AHC1G79 Datasheet PDF : 12 Pages
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NXP Semiconductors
74AHC1G79; 74AHCT1G79
Single D-type flip-flop; positive-edge trigger
11. Dynamic characteristics
Table 8. Dynamic characteristics
GND = 0 V; tr = tf = ≤ 3.0 ns. For test circuit see Figure 6. For waveforms see Figure 5.
Symbol Parameter Conditions
25 °C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min Max
Min
Max
For type 74AHC1G79
tpd
propagation CP to Q
[1]
delay
VCC = 3.0 V to 3.6 V
[2]
CL = 15 pF
- 4.9 8.4 1.0
9.8
1.0
11.5 ns
CL = 50 pF
- 6.9 12.0 1.0
14.0
1.0
15.5 ns
VCC = 4.5 V to 5.5 V
[3]
CL = 15 pF
- 3.5 5.6 1.0
7.0
1.0
8.0 ns
CL = 50 pF
- 5.1 8.0 1.0
10.0
1.0
11.0 ns
tsu
set-up time D to CP
th
hold time D to CP
3.0 1.0 -
3.0
-
4.0
-
ns
+2.0 −1.0 -
2.0
-
3.0
-
ns
tW
pulse width clock HIGH or LOW
3.0 -
-
3.0
-
4.0
-
ns
fmax
maximum
frequency
90 -
-
90
-
70
-
MHz
CPD
power
per buffer;
[4] -
15
-
-
-
-
-
pF
dissipation CL = 50 pF; f = 1 MHz;
capacitance VI = GND to VCC
For type 74AHCT1G79
tpd
propagation CP to Q
[1]
delay
VCC = 4.5 V to 5.5 V
[3]
CL = 15 pF
CL = 50 pF
- 3.5 5.0 1.0
6.0
1.0
8.0 ns
- 5.0 8.0 1.0
10.0
1.0
11.0 ns
tsu
set-up time D to CP
th
hold time D to CP
3.0 1.0 -
3.0
-
4.0
-
ns
+2.0 −1.0 -
2.0
-
3.0
-
ns
tW
pulse width clock HIGH or LOW
3.0 -
-
3.0
-
4.0
-
ns
fmax
maximum
frequency
90 -
-
90
-
70
-
MHz
CPD
power
per buffer;
[4] -
16
-
-
-
-
-
pF
dissipation CL = 50 pF; f = 1 MHz;
capacitance VI = GND to VCC
[1] tpd is the same as tPLH and tPHL.
[2] Typical values are measured at VCC = 3.3 V.
[3] Typical values are measured at VCC = 5.0 V.
[4] CPD is used to determine the dynamic power dissipation PD (µW).
PD = CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts.
74AHC_AHCT1G79_5
Product data sheet
Rev. 05 — 2 July 2007
© NXP B.V. 2007. All rights reserved.
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