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60CPH03PBF(2011) 查看數據表(PDF) - Vishay Semiconductors

零件编号
产品描述 (功能)
生产厂家
60CPH03PBF
(Rev.:2011)
Vishay
Vishay Semiconductors 
60CPH03PBF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
www.vishay.com
VS-60CPH03PbF, VS-60CPH03-N3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
trr
IRRM
Qrr
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
IF = 30 A
dIF/dt = - 200 A/μs
VR = 200 V
TJ = 125 °C
-
-
-
39
-
57
-
2.8
-
7.5
-
55
-
214
MAX.
55
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Thermal resistance,
junction to case per leg
TJ, TStg
RthJC
Thermal resistance,
junction to ambient per leg
RthJA Typical socket mount
Thermal resistance,
case to heatsink
RthCS Mounting surface, flat, smooth and greased
Weight
Mounting torque
Marking device
Case style TO-247AC
MIN.
- 65
-
-
-
-
-
6.0
(5.0)
TYP.
-
MAX.
175
UNITS
°C
0.5
0.9
-
40
°C/W
0.4
-
6.0
-
0.22
-
12
-
(10)
60CPH03
g
oz.
kgf cm
(lbf in)
Revision: 30-Sep-11
2
Document Number: 94500
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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