5N60-TA3-T 查看數據表（PDF） - Unisonic Technologies

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5N60-TA3-T

4.5 Amps, 600 Volts N-CHANNEL MOSFET

Unisonic Technologies 

5N60

ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

Drain-Source Diode Characteristics and Maximum Ratings

Drain-Source Diode Forward Voltage

VSD VGS = 0 V, IS = 4.5 A

Maximum Continuous Drain-Source Diode

Forward Current

IS

Maximum Pulsed Drain-Source Diode Forward

Current

ISM

Reverse Recovery Time

Reverse Recovery Charge

tRR VGS = 0 V, IS = 4.5 A,

QRR dIF / dt = 100 A/µs (Note 4)

Note 1. Repetitive Rating : Pulse width limited by TJ

2. L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25℃

3. ISD ≤ 4.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25℃

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Power MOSFET

MIN TYP MAX UNIT

1.4 V

4.5 A

18 A

300

ns

2.2

µC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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