30ETH06-1PBF 查看數據表（PDF） - Vishay Semiconductors

零件编号

产品描述 (功能)

生产厂家

30ETH06-1PBF

Hyperfast Rectifier, 30 A FRED Pt™

Vishay Semiconductors 

30ETH06S/30ETH06-1

Vishay High Power Products

Hyperfast Rectifier,

30 A FRED PtTM

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN. TYP.

Reverse recovery time

IF = 1.0 A, dIF/dt = 50 A/µs, VR = 30 V

trr

TJ = 25 °C

-

28

-

31

Peak recovery current

Reverse recovery charge

IRRM

Qrr

TJ = 125 °C

TJ = 25 °C

TJ = 125 °C

TJ = 25 °C

TJ = 125 °C

IF = 30 A

dIF/dt = 200 A/µs

VR = 200 V

-

77

-

3.5

-

7.7

-

65

-

345

MAX.

35

-

-

-

-

-

-

UNITS

ns

A

nC

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

Maximum junction and storage

temperature range

Thermal resistance,

junction to case per leg

TJ, TStg

RthJC

Thermal resistance,

junction to ambient per leg

RthJA

Typical socket mount

Thermal resistance,

case to heatsink

RthCS

Mounting surface, flat, smooth and greased

Weight

Mounting torque

Marking device

Case style D2PAK

Case style TO-262

MIN.

- 65

-

-

-

-

-

6.0

(5.0)

TYP.

-

MAX.

175

UNITS

°C

0.7

1.1

-

70

°C/W

0.2

-

2.0

-

0.07

-

12

-

(10)

30ETH06S

30ETH06-1

g

oz.

kgf · cm

(lbf · in)

www.vishay.com

2

For technical questions, contact: diodes-tech@vishay.com

Document Number: 93932

Revision: 08-Sep-08

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