2SK3638 查看數據表（PDF） - NEC => Renesas Technology
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2SK3638 Datasheet PDF : 7 Pages
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2SK3638
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
250
200
VGS = 10 V
150
100
4.5 V
50
Pulsed
0
0
0.5
1
1.5
2
2.5
3
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
100
10
Tch = −55°C
25°C
75°C
150°C
1
0.1
0.01
0
VDS = 10 V
Pulsed
1
2
3
4
5
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3
VDS = 10 V
ID = 1 mA
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
Tch - Channel Temperature - °C
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
Tch = −55°C
25°C
75°C
150°C
10
1
0.1
0.1
VDS = 10 V
Pulsed
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
30
Pulsed
25
20
15
VGS = 4.5 V
10
5
10 V
0
1
10
100
1000
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
Pulsed
25
20
15
10
ID = 32 A
5
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
4
Data Sheet D15966EJ3V0DS
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