K3130 查看數據表（PDF） - Toshiba
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K3130 Datasheet PDF : 6 Pages
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RDS (ON) – Tc
5
Common source
VGS = 10 V
4 Pulse test
3
2
ID = 6 A
3
1.5
1
0
0
40
80
120
160
Case temperature Tc (°C)
Capacitance – VDS
3000
Ciss
1000
500
300
100
Coss
50
Common source
30 VGS = 0 V
f = 1 MHz
Tc = 25°C
10
0.1
0.3 0.5 1
Crss
3 5 10
30 50 100
Drain-source voltage VDS (V)
2SK3130
10
Common source
Tc = 25°C
Pulse test
IDR – VDS
1
10 5 3
VGS = 0, −1 V
0.1
0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2
Drain-source voltage VDS (V)
Vth – Tc
5
Common source
VDS = 10 V
4
ID = 1 mA
Pulse test
3
2
1
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
PD – Tc
50
40
30
20
10
0
0
40
80
120
160
200
Case temperature Tc (°C)
Dynamic input/output characteristics
500
20
400
300
200
100
0
0
VDS
16
VDD = 100 V
12
200
400
VGS
8
Common source
ID = 6 A
Tc = 25°C
Pulse test
4
0
10
20
30
40
50
Total gate charge Qg (nC)
4
2009-09-29
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