2SK2912 查看數據表（PDF） - Renesas Electronics
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2SK2912 Datasheet PDF : 9 Pages
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2SK2912(L), 2SK2912(S)
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche Energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
IAP*3
EAR*3
Pch*2
Tch
Tstg
Ratings
60
±20
40
160
40
40
137
50
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS 60
Gate to source breakdown voltage V(BR)GSS ±20
Gate to source leak current
IGSS
—
Zero gate voltage drain current
IDSS
—
Gate to source cutoff voltage
VGS(off)
1.5
Static drain to source on state
resistance
RDS(on)
—
RDS(on)
—
Forward transfer admittance
|yfs|
20
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Turn-on delay time
td(on)
—
Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Body to drain diode forward voltage VDF
—
Body to drain diode reverse
recovery time
trr
—
Note: 4. Pulse test
Typ
—
—
—
—
—
15
25
35
1500
720
200
20
180
200
200
0.95
70
Max
—
—
±10
10
2.5
20
40
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
V
V
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 60 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 20 A, VGS = 10 V*4
ID = 20 A, VGS = 4 V*4
ID = 20 A, VDS = 10 V*4
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 20 A, VGS = 10 V,
RL = 1.5 Ω
IF = 40 A, VGS = 0
IF = 40 A, VGS = 0
diF/ dt = 50A/ µs
Rev.2.00 Sep 07, 2005 page 2 of 8
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