2SJ465 查看數據表（PDF） - Toshiba

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2SJ465

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV)

Toshiba 

2SJ465

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV)

2SJ465

DC−DC Converter, Relay Drive and Motor Drive

Applications

z 2.5-V gate drive

z Low drain−source ON-resistance : RDS (ON) = 0.54 Ω (typ.)

z High forward transfer admittance : |Yfs| = 1.7 S (typ.)

z Low leakage current : IDSS = −100 μA (max) (VDS = −16 V)

z Enhancement mode : Vth = −0.5 to −1.1 V

(VDS = −10 V, ID = −200 μA)

Unit: mm

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain−source voltage

Drain−gate voltage (RGS = 20 kΩ)

Gate−source voltage

Drain current

DC (Note 1)

Pulse (Note 1)

Drain power dissipation

Drain power dissipation

(Note 2)

Channel temperature

Storage temperature range

VDSS

VDGR

VGSS

ID

IDP

PD

PD

Tch

Tstg

−16

V

−16

V

±8

V

−2

A

−6

0.5

W

1.5

W

150

°C

−55 to 150

°C

JEDEC

―

JEITA

―

TOSHIBA

2−5K1B

Weight: 0.05 g (typ.)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)

Note 3:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change

in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Thermal resistance, channel to

ambient

Rth (ch−a)

250

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Unit

°C / W

1

2009-12-10

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