2SD975 查看數據表（PDF） - Hitachi -> Renesas Electronics

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产品描述 (功能)

生产厂家

2SD975

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SD975

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Collector to base breakdown V(BR)CBO 150

voltage

Collector to emitter breakdown V(BR)CEO 60

voltage

Emitter to base breakdown

voltage

V(BR)EBO

5

Collector cutoff current

I CBO

—

DC current transfer ratio

hFE

150

Collector to emitter saturation VCE(sat)

—

voltage

Base to emitter saturation

voltage

VBE(sat)

—

Fall time

Note: 1. Pulse test.

tf

—

Typ

—

—

—

—

—

—

—

—

Max Unit

—

V

—

V

—

V

1.0 µA

—

0.5 V

1.3 V

0.6 µs

Test conditions

IC = 1 mA, IE = 0

IC = 10 mA, RBE = ∞

IE = 1 mA, IC = 0

VCB = 100 V, IE = 0

VCE = 5 V, IC = 1.5 A*1

IC = 1.5 A, IB = 0.05 A*1

IC = 1.5 A, IB1 = –IB2 = 50 mA

Maximum Collector Dissipation

Curve

1.2

0.8

0.4

0

50

100

150

Ambient temperature Ta (°C)

Area of Safe Operation

6

(20 V, 5 A)

5

4

TC = 25°C

f = 15.75 kHz

3

2

1

(60 V, 0.5 A)

0

50

100

150

Collector to emitter voltage VCE (V)

2

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