2SD380 查看數據表（PDF） - Inchange Semiconductor

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2SD380

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD380

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 10mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 1A

VBE(sat) Base-Emitter Saturation Voltage

IC= 5A; IB=B 1A

ICBO

Collector Cutoff Current

VCB= 750V ; IE= 0

VCB= 1500V ; IE= 0

hFE

DC Current Gain

IC= 5A ; VCE= 10V

tf

Fall Time

tstg

Storage Time

IC= 5A, IBend= 1.5A, LB= 5μH

5

V

10

V

1.6

V

100 μA

1

mA

5

15

0.9 μs

11

μs

isc Website：www.iscsemi.cn

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