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2SD2449 查看數據表(PDF) - Toshiba

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2SD2449 Datasheet PDF : 4 Pages
1 2 3 4
2SD2449
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 160 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1)
(Note)
VCE = 5 V, IC = 8 A
hFE (2)
VCE (sat)
VBE
fT
Cob
VCE = 5 V, IC = 12 A
IC = 8 A, IB = 8 mA
VCE = 5 V, IC = 8 A
VCE = 5 V, IC = 1 A
VCB = 10 V, IE = 0, f = 1 MHz
160
3000
2000
Note: hFE (1) classification A: 3000 to 10000, B: 5000 to 15000, C: 7000 to 20000
Typ. Max Unit
5
µA
5
µA
V
20000
3.0
V
3.0
V
30
MHz
150
pF
Marking
TOSHIBA
2SD2449
JAPAN
hFE classification (A/B/C)
Product No.
Lot No.
Explanation of Lot No.
Month of manufacture (January to December are denoted by letters A to L respectively.)
Year of manufacture (Last decimal digit of the year of manufacture)
2
2003-02-04

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