2SD1720 查看數據表（PDF） - Inchange Semiconductor

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2SD1720

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD1720

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB=B 0

V(BR)CBO Collector-Base Breakdown Voltage

IC= 50μA; IE= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 50μA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.3A

VBE(sat) Base-Emitter Saturation Voltage

IC= 3A; IB=B 0.3A

ICBO

Collector Cutoff Current

VCB= 60V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 4V; IC= 0

hFE

DC Current Gain

IC= 1A; VCE= 5V

COB

Output Capacitance

IE= 0; VCB= 10V; f= 1MHz

fT

Current-Gain—Bandwidth Product

IE= -0.5A; VCE= 5V

MIN TYP. MAX UNIT

60

V

60

V

5

V

1.0

V

1.5

V

10 μA

10 μA

100

320

130

pF

8

MHz

‹ hFE Classifications

E

F

100-200 160-320

isc Website：www.iscsemi.cn

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