2SD1410 查看數據表（PDF） - Inchange Semiconductor

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2SD1410

Silicon NPN Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

2SD1410

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 250V(Min)

·Collector-Emitter Saturation Voltage-

:V CE(sat)= 2.0V(Max) @IC= 4A

·High DC Current Gain

: hFE= 2000(Min) @ IC= 2A, VCE= 2V

APPLICATIONS

·Igniter applications

·High voltage switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

300

V

VCEO

Collector-Emitter Voltage

250

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

6

A

IBB

Base Current-Continuous

Collector Power Dissipation

@ Ta=25℃

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

1

A

2.0

W

30

150

℃

-55~150 ℃

isc Website：www.iscsemi.cn

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