2SD1419 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SD1419

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SD1419

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

VCBO

VCEO

VEBO

IC

i *1

C(peak)

PC * 2

Tj

120

100

5

1

2

1

150

Storage temperature

Tstg

–55 to +150

Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%

2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)

Unit

V

V

V

A

A

W

°C

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 120 —

voltage

Collector to emitter breakdown V(BR)CEO 100 —

voltage

Emitter to base breakdown

V(BR)EBO

5

—

voltage

Collector cutoff current

I CBO

—

—

DC current transfer ratio

hFE1*1

60

—

hFE2

30

—

Collector to emitter saturation VCE(sat)

—

—

voltage

Base to emitter voltage

VBE

—

—

Gain bandwidth product

fT

—

140

Collector output capacitance Cob

—

12

Notes: 1. The 2SD1419 is grouped by hFE1 as follows.

2. Pulse test

Mark

DD

DE

hFE1

60 to 120 100 to 200

Max Unit Test conditions

—

V

IC = 10 µA, IE = 0

—

V

IC = 1 mA, RBE = ∞

—

V

IE = 10 µA, IC = 0

10

µA

200

—

1

V

VCB = 100 V, IE = 0

VCE = 5 V, IC = 150 mA*2

VCE = 5 V, IC = 500 mA*2

IC = 500 mA, IB = 50 mA*2

1.5 V

VCE = 5 V, IC = 150 mA*2

—

MHz VCE = 5 V, IC = 150 mA*2

—

pF

VCB = 10 V, IE = 0, f = 1 MHz

See characteristic curves of 2SD1418.

2

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