2SD1194 查看數據表（PDF） - Inchange Semiconductor

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2SD1194

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-base breakdown voltage

IC=5mA ; IE=0

V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;RBE=∞

VCEsat Collector-emitter saturation voltage IC=1.5A, IB=3mA

VBEsat Base-emitter saturation voltage

IC=1.5A, IB=3mA

ICBO

Collector cut-offcurrent

VCB=80V;IE=0

IEBO

Emitter cut-offcurrent

hFE

DC current gain

fT

Transition frequency

Switching times

VEB=5V;IC=0

IC=1.5A ; VCE=3V

IC=1.5A ; VCE=5V

ton

Turn-on time

tstg

Storage time

tf

Fall time

IC=500IB1=-500IB2=1A

VCC=50V;RL=50Ω

Product Specification

2SD1194

MIN TYP MAX UNIT

110

V

100

V

0.9

1.5

V

2.0

V

0.1 mA

3.0 mA

1500

20

MHz

0.7

μs

5.0

μs

1.2

μs

2

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