2SD1187 查看數據表（PDF） - Inchange Semiconductor

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2SD1187

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD1187

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 80V(Min)

·Low Collector Saturation Voltage-

: VCE(sat)= 0.5V(Max.) @ IC= 6A

·High Power Dissipation

APPLICATIONS

·High power switching applications

·DC-DC converter and DC-AC inverter applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

10

A

IBB

Base Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

2

A

80

W

150

℃

-55~150

℃

isc Website：www.iscsemi.cn

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