2SD1115 查看數據表（PDF） - Hitachi -> Renesas Electronics
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2SD1115 Datasheet PDF : 4 Pages
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2SD1115(K)
Silicon NPN Triple Diffused
Application
High voltage switching, igniter
Outline
TO-220AB
1
23
1. Base
2. Collector
(Flange)
3. Emitter
2
1
4.5 kΩ
(Typ)
250 Ω
(Typ)
3
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
IC(peak)
PC*1
Tj
Tstg
Ratings
400
300
7
3
6
40
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
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