2SC5351 查看數據表（PDF） - Toshiba

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2SC5351

TOSHIBA Transistor Silicon NPN Triple Diffused Type

Toshiba 

Safe Operating Area

10

IC max (pulsed)*

3 IC max (continuous)

1 ms*

10 ms*

1

100 ms*

0.3

DC operation

Tc = 25°C

0.1

0.03

0.01

*: Single nonrepetitive pulse

Tc = 25°C

0.003 Curves must be derated

linearly with increase in

temperature.

VCEO max

0.001

0.1 0.3

1

3

10 30 100 300 1000

Collector-emitter voltage VCE (V)

2SC5351

4

2006-11-10

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