C5208 查看數據表（PDF） - Toshiba
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C5208 Datasheet PDF : 5 Pages
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IC – VCE
1000
Common emitter
Ta = 25°C
800
80
60
40
600
30
20
10
400
5
200
IB = 2 mA
0
0
0
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
VCE (sat) – IC
10
Common emitter
5
IC/IB = 10
3
1
0.5
0.3
0.1
0.05
0.03
1
Ta = 100°C
−40 25
3
10
30
100
300
1000
Collector current IC (mA)
2SC5208
300
100
50
30
10
5
3
1
1
hFE – IC
Ta = 100°C
25
−40
Common emitter
VCE = 5 V
3
10
30
100 300 1000
Collector current IC (mA)
VBE (sat) – IC
10
Common emitter
5
IC/IB = 10
3
1
Ta = −40°C
0.5
100
0.3
25
0.1
1
3
10
30
100
300
1000
Collector current IC (mA)
1000
800
IC – VBE
Common emitter
VCE = 5 V
600
400
Ta = 100°C 25
−40
200
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-emitter voltage VBE (V)
Switching Characteristics
100
50
IC/IB = 10
30
IB1 = −IB2
Pulse width = 20 μs
10
Duty cycle ≤ 1%
tstg
Ta = 25°C
5
3
1
tf
0.5
0.3
tr
0.1
0
0.1
0.2
0.3
0.4
0.5
Collector current IC (A)
3
2006-11-13
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