C4448 查看數據表（PDF） - Quanzhou Jinmei Electronic

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C4448

Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose)

Quanzhou Jinmei Electronic 

Product Specification

Silicon Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

VCEsat Collector-emitter saturation voltage

VBEsat Base-emitter saturation voltage

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

hFE-1

DC current gain

hFE-2

DC current gain

fT

Transition frequency

COB

Collector output capacitance

CONDITIONS

IC=50mA IB=5mA

IC=50mA IB=5mA

VCB=200V IE=0

VEB=5V; IC=0

IC=10mA ; VCE=10V

IC=100mA ; VCE=10V

IC=40mA ; VCE=10V

f=1MHz;VCB=30V

www.jmnic.com

2SC4448

MIN

TYP.

MAX UNIT

1.0

V

1.0

V

100

μA

10

μA

40

200

20

240

MHz

3.3

pF

JMnic

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