C4550 查看數據表（PDF） - Renesas Electronics

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C4550

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

Renesas Electronics 

2SC4550

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Symbol

Conditions

Collector to emitter voltage

Collector to emitter voltage

VCEO(SUS)

VCEX(SUS)

IC = 4.0 A, IB = 0.4 A, L = 1 mH

IC = 4.0 A, IB1 = −IB2 = 0.4 A,

VBE(OFF) = −1.5 V, L = 180 µH, clamped

Collector cutoff current

Collector cutoff current

Collector cutoff current

Collector cutoff current

ICBO

ICER

ICEX1

ICEX2

VCB = 60 V, IE = 0

VCE = 60 V, RBE = 50 Ω, Ta = 125°C

VCE = 60 V, VBE(OFF) = −1.5 V

VCE = 60 V, VBE(OFF) = −1.5 V,

Ta = 125°C

Emitter cutoff current

IEBO

VEB = 5.0 V, IC = 0

DC current gain

hFE1* VCE = 2.0 V, IC = 0.7 A

DC current gain

hFE2* VCE = 2.0 V, IC = 1.5 A

DC current gain

hFE3* VCE = 2.0 V, IC = 4.0 A

Collector saturation voltage VCE(sat)1* IC = 4.0 A, IB = 0.2 A

Collector saturation voltage VCE(sat)2* IC = 6.0 A, IB = 0.3 A

Base saturation voltage

VBE(sat)1* IC = 4.0 A, IB = 0.2 A

Base saturation voltage

VBE(sat)2* IC = 6.0 A, IB = 0.3 A

Collector capacitance

Cob

VCB = 10 V, IE = 0, f = 1.0 MHz

Gain bandwidth product

fT

VCE = 10 V, IC = 1.0 A

Turn-on time

Storage time

Fall time

ton

IC = 4.0 A, RL = 12.5 Ω,

tstg

IB1 = −IB2 = 0.2 A, VCC ≅ 50 V

Refer to the test circuit.

tf

* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%

hFE CLASSIFICATION

Marking

hFE2

M

100 to 200

L

150 to 300

K

200 to 400

SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT

MIN.

TYP.

MAX.

Unit

60

V

60

V

10

µA

1.0

mA

10

µA

1.0

mA

10

µA

100

100

200

400

60

0.3

V

0.5

V

1.2

V

1.5

V

100

pF

150

MHz

0.1

0.3

µs

1.0

1.5

µs

0.1

0.3

µs

Base current

waveform

Collector current

waveform

2

Data Sheet D15596EJ2V0DS

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