2SC4499S 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SC4499S

Silicon NPN Triple Diffused

Hitachi -> Renesas Electronics 

2SC4499(L)/(S)

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Note: 1. Value at TC = 25°C.

Symbol

VCBO

VCEO

VEBO

IC

I C(peak)

PC

PC * 1

Tj

Tstg

Ratings

Unit

500

V

400

V

10

V

0.5

A

1.0

A

0.75

W

10

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to emitter sustain

voltage

VCEO(sus)

400

—

Emitter to base breakdown

V(BR)EBO

10

—

voltage

Collector cutoff current

I CBO

—

—

I CEO

—

—

DC current transfer ratio

hFE1

12

—

hFE2

5

—

Collector to emitter saturation VCE(sat)

—

—

voltage

Base to emitter saturation

VBE(sat)

—

—

voltage

Turn on time

Storage time

Fall time

Note: 1. Pulse test.

t on

—

—

t stg

—

—

tf

—

—

Max Unit

—

V

—

V

20

µA

50

—

—

1.0 V

1.5 V

1.0 µs

2.0 µs

1.0 µs

Test conditions

IC = 0.1 A, RBE = ∞

L = 100 mH

IE = 10 mA, IC = 0

VCB = 400 V, IE = 0

VCE = 350 V, RBE = ∞

VCE = 5 V, IC = 0.25 A*1

VCE = 5 V, IC = 0.5 A*1

IC = 0.25 A, IB = 0.05 A*1

IC = 0.25 A, IB = 0.05 A*1

IC = 0.5 A, IB1 = –IB2 = 0.1 A,

VCC ≅ 150 V

2

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