2SC3969 查看數據表（PDF） - Inchange Semiconductor

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2SC3969

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC3969

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.0A ; IB1= 0.1A, L= 1mH

V(BR)CBO Collector-Base Breakdown Voltage

IC= 50μA; IE= 0

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB=B 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 50μA; IC= 0

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 1A; IB=B 0.2A

VBE(sat) Base-Emitter Saturation Voltage

IC= 1A; IB=B 0.2A

ICBO

Collector Cutoff Current

VCB= 400V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 7V; IC= 0

hFE

DC Current Gain

IC= 0.1A ; VCE= 5V

fT

Current-Gain—Bandwidth Product

IE= -0.1A ; VCE= 10V

COB

Output Capacitance

IE= 0; VCB= 10V; f= 1.0MHz

Switching times

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

IC= 0.8A ; IB1= -IB2= 0.08A;

RL= 250Ω;VCC≈ 200V

MIN TYP. MAX UNIT

400

V

400

V

400

V

7

V

1.0

V

1.5

V

10 μA

10 μA

25

50

10

MHz

30

pF

1.0 μs

2.5 μs

1.0 μs

isc Website：www.iscsemi.cn

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