2SC3852 查看數據表（PDF） - Inchange Semiconductor

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2SC3852

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC3852

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 60V(Min)

·DC Current Gain-

: hFE= 200(Min)@ IC= 0.5A

APPLICATIONS

·Driver for solenoid and motor, series regulator and

general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO

Collector-Base Voltage

80

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

3

A

IB

Base Current-Continuous

PC

Collector Power Dissipation

@TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature

1

A

25

W

150

℃

-55~150 ℃

isc Website：www.iscsemi.cn

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