2SC3636 查看數據表（PDF） - SavantIC Semiconductor

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2SC3636

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC3636

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0

VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A

VBEsat

Base-emitter saturation voltage

ICBO

Collector cut-off current

ICES

Collector cut-off current

IEBO

Emitter cut-off current

IC=4A ;IB=0.8A

VCB=500V; IE=0

VCE=900V; RBE=0

VEB=5V; IC=0

hFE

DC current gain

IC=0.8A ; VCE=5V

Switching times

ts

Storage time

tf

Fall time

VCC=200V;IC=4A;

IB1=0.8A; IB2=-1.6A

MIN TYP. MAX UNIT

500

V

2.0

V

1.5

V

10

µA

0.5 mA

1.0 mA

8

3.0

µs

0.1 0.2

µs

2

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